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hexfet ? power mosfet applications

d1 n-channel mosfet p-channel mosfet d1 d 2 d2 g1 s2 g2 s1 top view 8 1 2 3 4 5 6 7 so-8 n-ch p-ch v ds 30 -30 v r ds(on) max 27 64 m ? q g (typical) 6.8 8.1 nc i d (@t a = 25c) 6.8 -4.6 a absolute maximum ratings parameter units n-channel p-channel v gs gate-to-source voltage 20 20 i d @ t a = 25c continuous drain current, v gs @ 10v 6.8 -4.6 i d @ t a = 70c continuous drain current, v gs @ 10v 5.4 -3.7 i dm pulsed drain current 34 -23 p d @t a = 25c power dissipation p d @t a = 70c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range thermal resistance parameter typ. max units r ? ??? 20 r ? ??? 62.5 -55 to + 150 1.3 2.0 c/w max. v a w c 0.016 form quantity tube/bulk 95 IRF9389PBF tape and reel 4000 irf9389trpbf base part number package type standard pack orderable part number IRF9389PBF so-8 features benefits high and low-side mosfets in a single package increased power density high-side p-channel mosfet easier drive circuitry industry-standard pinout results in multi-vendor compatib ility compatible with existing surface mount techniques ? !" #$%&
!" #$%& notes: repetitive rating; pulse width limited by max. junction temperature. (see fig. 16) pulse width ?? 400 s; duty cycle ?? 2%. surface mounted on 1 in square cu board ?

static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage n-ch 30 ??? ??? v p-ch -30 ??? ??? ?? ? ? ? a p-ch -1.3 -1.8 -2.3 v ds = v gs , i d = -10 a n-ch ??? ??? 1.0 a i dss drain-to-source leakage current p-ch ??? ??? -1.0 n-ch ??? ??? 150 p-ch ??? ??? -150 i gss gate-to-source forward leakage n-ch ??? ??? 100 na p-ch ??? ??? -100 gate-to-source reverse leakage n-ch ??? ??? -100 p-ch ??? ??? 100 gfs forward transconductance n-ch 8.2 ??? ??? s p-ch 4.1 ??? ??? q g total gate charge n-ch ??? 6.8 14 nc p-ch ??? 8.1 16 q gs gate-to-source charge n-ch ??? 1.4 ??? p-ch ??? 1.3 ??? q gd gate-to-drain ("miller") charge n-ch ??? 0.98 ??? p-ch ??? 2.1 ??? r g gate resistance n-ch ??? 2.2 4.4 ? diode characteristics parameter min. typ. max. units i s continuous source current (body diode n-ch ??? ??? 2.0 a p-ch ??? ??? -2.0 i sm pulsed source current (body diode) n-ch ??? ??? 34 p-ch ??? ??? -23 v sd diode forward voltage n-ch ??? ??? 1.2 v p-ch ??? ??? -1.2 t rr reverse recovery time n-ch ??? 8.4 13 ns p-ch ??? 11 17 q rr reverse recovery charge n-ch ??? 2.3 3.5 nc p-ch ??? 4.8 7.2 v gs = - 10v, v ds = -15v, i d = -4.6a n-channel i d = 1.0a, r g = 6.2 ? v ds = 24v, v gs = 0v p-channel v dd = 15v, v gs = 4.5v v dd = - 15v, v gs = -4.5v v gs = 0v, v ds = 15v, ? = 1.0mhz v ds = - 24v, v gs = 0v v ds = - 24v, v gs = 0v, t j = 125c v ds = - 15v, i d = -3.7a conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 6.8a v gs = 4.5v, i d = 5.4a conditions v gs = 10v, v ds = 15v, i d = 6.8a v gs = 0v, i d = - 250 a reference to 25c, i d = -1ma v gs = - 10v, i d = -4.6a v gs = 0v, v ds = -15v, ? = 1.0khz n-channel: t j = 25c, i f = 2.0a, t j = 25c, i s = 2.0a, v gs = 0v v dd = -15v, di/dt = 102/ s t j = 25c, i s = -2.0a, v gs = 0v v dd = 15v, di/dt = 102/ s i d = -1.0a, r g = 6.8 ?
!" #$%& & n-channel fig 3. typical transfer characteristics fig 2. typical output characteristics fig 1. typical output characteristics fig 4. normalized on-resistance vs. temperature 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 7.5v 6.5v 5.5v 4.5v 4.0v 3.5v 3.0v bottom 2.75v ? 60 s pulse width tj = 25c 2.75v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.75v ? 60 s pulse width tj = 150c vgs top 7.5v 6.5v 5.5v 4.5v 4.0v 3.5v 3.0v bottom 2.75v 1 2 3 4 5 6 v gs , gate-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 15v ? 60 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 5.4a v gs = 4.5v
!" #$%& $ fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 8. maximum safe operating area fig 7. typical source-drain diode forward voltage n-channel 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0123456789 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v v ds = 6.0v i d = 6.8a 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v sd , source-to-drain voltage (v) 0.1 1 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec dc
!" #$%& ' fig 9. maximum drain current vs. ambient temperature fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
???? ??????? + - fig 12. typical on-resistance vs. drain current fig 11. typical on-resistance vs. gate voltage 2 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 20 40 60 80 100 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 6.8a 0 5 10 15 20 25 30 35 40 45 i d , drain current (a) 20 30 40 50 60 70 80 90 100 110 120 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) vgs = 4.5v vgs = 10v 25 50 75 100 125 150 t a , ambient temperature (c) 0 1 2 3 4 5 6 7 i d , d r a i n c u r r e n t ( a )
!" #$%& ( n-channel fig 13. threshold voltage vs. temperature typical power vs. time fig 15b. gate charge test circuit fig 15a. basic gate charge waveform q g q gs q gd v g charge ) d.u.t. v ds i d i g 3ma v gs .3 ? f 50k ? .2 ? f 12v current regulator same type as d.u.t. current sampling resistors + - -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 10 a 1e-8 1e-7 1e-6 1e-5 1e-4 1e-3 1e-2 time (sec) 0 4000 8000 12000 16000 20000 p o w e r ( w )
!" #$%& * fig 16. typical effective transient thermal impedance, junction-to-ambient n and p-channel 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + t a
!" #$%& + p-channel fig 19. typical transfer characteristics fig 18. typical output characteristics fig 17. typical output characteristics fig 20. normalized on-resistance vs. temperature 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top -8.0v -7.0v -6.0v -5.0v -4.5v -3.5v -3.0v bottom -2.75v ? 60 s pulse width tj = 25c -2.75v 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) -2.75v ? 60 s pulse width tj = 150c vgs top -8.0v -7.0v -6.0v -5.0v -4.5v -3.5v -3.0v bottom -2.75v 1 2 3 4 5 6 7 -v gs , gate-to-source voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = -15v ? 60 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = -3.7a v gs = -4.5v
!" #$%& , fig 22. typical gate charge vs. gate-to-source voltage fig 21. typical capacitance vs. drain-to-source voltage fig 24. maximum safe operating area fig 23. typical source-drain diode forward voltage p-channel 1 10 100 -v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 024681012 q g total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 - v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = -24v v ds = -15v v ds = -6.0v i d = -4.6a 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -v sd , source-to-drain voltage (v) 0.10 1.00 10.00 100.00 - i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec dc
!" #$%& fig 25. maximum drain current vs. ambient temperature
???? ??????? + - v ds 90% 10% v gs t d(on) t r t d(off) t f fig 26a. switching time test circuit fig 26b. switching time waveforms fig 28. typical on-resistance vs. drain current fig 27. typical on-resistance vs. gate voltage p-channel 25 50 75 100 125 150 t a , ambient temperature (c) 0.0 1.0 2.0 3.0 4.0 5.0 - i d , d r a i n c u r r e n t ( a ) 2 4 6 8 10 12 14 16 18 20 -v gs, gate -to -source voltage (v) 40 80 120 160 200 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = -4.6a 0 5 10 15 20 25 30 -i d , drain current (a) 0 100 200 300 400 500 600 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) vgs = -4.5v vgs = -10v
!" #$%& fig 31b. gate charge test circuit fig 31a. basic gate charge waveform q g q gs q gd v g charge d.u.t. v ds i d i g -3ma v gs .3 ? f 50k ? .2 ? f 12v current regulator same type as d.u.t. current sampling resistors + - p-channel fig 29. threshold voltage vs. temperature fig 30 typical power vs. time 1e-8 1e-7 1e-6 1e-5 1e-4 1e-3 1e-2 time (sec) 0 4000 8000 12000 16000 20000 p o w e r ( w ) -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 - v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = -10 a
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so-8 package details so-8 part marking

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!" #$%& & 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. tape and reel
!" #$%& $ ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245 to contact international rectifier, please visit http://www.irf.com/whoto-call/ - ." /" 0/1 213332 "3/#3 -- 422/!5657 2 " ms l 1 (per je de c j-s t d-020d ?? ) rohs compliant yes qualification information ? qualification level cons umer (per je de c je s d47f ?? guidelines ) moisture sensitivity level so-8

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